| PART |
Description |
Maker |
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| MAX264003 MAX2641EUT-T MAX2640 MAX2640EUT-T MAX264 |
400MHz to 2500MHz SiGe Ultra-Low-Noise Amplifiers
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| MAX2640 MAX2640EUT-T MAX2640-MAX2641 MAX2641EUT-T |
Hex inverters 14-SOIC 0 to 70 400MHz500MHz的硅锗超低噪声放大器
400MHz to 2500MHz SiGe Ultra-Low-Noise Amplifiers
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| BGA430 |
Silicon MMICs - 30dB LNB Amplifier, 0.9...2.2GHz, SOT363
|
Infineon
|
| BGB540 BGA430 |
A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
|
Infineon Technologies A...
|
| SPM3211 |
GaAs MMICs
|
SANYO
|
| SPM3215 |
GaAs MMICs
|
SANYO
|
| NESG240033 NESG240033-A NESG240033-T1B NESG240033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| NESG220034-A NESG220034-T1 NESG220034-T1-A NESG220 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
| NCV8752BSN33T1G NCV8752BSN18T1G NCV8752BSN28T1G |
200 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, Low Dropout Regulator
|
ON Semiconductor
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
